PART |
Description |
Maker |
MT49H32M9CFM-XX MT49H16M18C MT49H16M18CFM-XX MT49H |
288Mb SIO REDUCED LATENCY(RLDRAM II)
|
MICRON[Micron Technology]
|
IS49NLC18160 IS49NLC36800 IS49NLC93200 |
288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
|
Integrated Silicon Solution, Inc
|
MT49H8M36 |
288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II
|
Micron Technology
|
MT49H16M18 MT49H32M9 |
288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II
|
Micron Technology
|
IS49RL36160 |
576Mb: x18, x36 RLDRAM 3 Features
|
Integrated Silicon Solution, Inc
|
MT49H8M36 MT49H16M18 MT49H32M9 |
288Mb CIO Reduced Latency
|
MICRON[Micron Technology]
|
VM-700 |
MEM’s Clock Oscillator
|
Vectron International, Inc
|
HYR166430G-840 HYR163230G-840 HYR166430G-845 HYR16 |
288MB Rambus RIMM Modules(288MRambus RIMM 模块) RAMBUS DRAM Module Rambus的内
|
SIEMENS AG Infineon Technologies AG
|
FS100VSJ-03 |
HORZ TIP JK, RUG .080& JOHNSON COMPONENT 105-2203-101 100 A, 30 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET HORZ TIP JK, RUG .080& JOHNSON COMPONENT 105-2203-101 MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors] Mitsubishi Electric Corporation
|
16110-BN-F-ST-LED-AM-6 16110-BN-M-ST-LED-AM-6 1611 |
LCD Component
|
http:// List of Unclassifed Manufacturers ETC
|
30KPA90A 30KPA160A 30KPA180A 30KPA220A 30KPA260A 3 |
POWER TVS COMPONENT
|
PROTEC[Protek Devices]
|